Three-dimensional analysis of the impact of grain size and recombination rate at grain boundaries on the extension of the space charge zone (ZCE) of a polycrystalline silicon monofacial photocell under multispectral illumination.
Résumé
In this article, we investigate the extension of the space charge region within a three-dimensional bifacial polysilicon photocell subjected to multispectral illumination in a static regime. Our analysis focuses on the influence of grain size and recombination rates at grain boundaries on the characteristics of this region.
By solving the continuity equation, we derive the expression for the density of excess minority charge carriers, from which we subsequently obtain the relative density of these carriers as a function of depth. This framework allows us to delineate how the relative density of minority charge carriers correlates with the extension of the space charge zone.
Our findings indicate that the extensionZ0,av of the space charge zone can be modeled as exhibiting the properties of a plane capacitor. Specifically, we explore how variations in grain size and recombination rates at grain boundaries affect the overall extension of this zone in the polycrystalline silicon cell.
We observe that an increase in recombination velocities at grain boundaries results in a reduction of the diffusion capacity, transitioning from Sgb = 20 cm/s. Conversely, enlarging the grain size from Cav = 1.331x104 nF/cm-2 to Cav = 5.04x103 nF/cm-2. enhances the diffusion capacity, reaching a peak value of g = 20 mm to g = 3,00 x 102 mm enhances the diffusion capacity, reaching a peak value of Cav = 3.50 x105 nF/cm-2. Through a detailed analysis of the relative densities of minority charge carriers as a function of depth z within the base, we are able to articulate the extensionZ0,av of the space charge zone. This parameter serves as a critical indicator of the photocell's performance and overall quality.
In summary, our research elucidates the interplay between microstructural parameters and the fundamental electrical properties of bifacial polysilicon photocells, providing valuable insights for future advancements in photovoltaic technology.
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